kw.\*:("As Ga P")
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Anti-stokes luminescence in nitrogen doped GaAs1-xPxalloysMEFTAH, A; OUESLATI, M; SCALBERT, D et al.EPJ. Applied physics (Print). 1998, Vol 1, Num 1, pp 35-38, issn 1286-0042Conference Paper
Determination of excitonic binding energies in symmetrically strained (GaIn)As/Ga(AsP) multiple quantum wells using quantum beat spectroscopyKOCH, M; VOLK, M; MEIER, T et al.Superlattices and microstructures. 1994, Vol 15, Num 3, pp 329-332, issn 0749-6036Article
Electronic structure of (111)-GaAsP/AlGaAs strained-layer quantum wellsZHANG, X; ISHIKAWA, M; YAGUCHI, H et al.Surface science. 1997, Vol 387, Num 1-3, pp 371-382, issn 0039-6028Article
A numerical analysis for the conversion phenomenon of GaAs to GaAsP on a GaP substrate in an LPE systemKIMURA, M; DOST, S; UDONO, H et al.Journal of crystal growth. 1996, Vol 169, Num 4, pp 697-703, issn 0022-0248Article
DX center in GaAsPZEMAN, J; HUBIK, P; KRISTOFIK, J et al.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum. 1995, Vol 119-20, pp 175-186, issn 1012-0386Article
Large negative persistent photoconductivity of bulk GaAs1-xPx (x=0.02-0.03) single crystalsSŁUPINSKI, T; NOWAK, G; BOZEK, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 325-328, issn 0921-5107Conference Paper
Thermodynamic analysis of GaAs1-xPx vapor phase epitaxyGOPALAKRISHNAN, N; DHANASEKARAN, R.Journal of the Electrochemical Society. 1996, Vol 143, Num 8, pp 2631-2635, issn 0013-4651Article
GaAs1-xPx/GaAs quantum-well structures with tensile-strained barriersAGAHI, F; LAU, K. M; KOTELES, E. S et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 2, pp 459-465, issn 0018-9197Article
Epitaxial III-V nanowires on siliconMARTENSSON, Thomas; SVENSSON, C. Patrik T; WACASER, T. Brent A et al.Nano letters (Print). 2004, Vol 4, Num 10, pp 1987-1990, issn 1530-6984, 4 p.Article
Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrateTATSUOKA, Yasuaki; UEMURA, Masaya; KITADA, Takahiro et al.Journal of crystal growth. 2001, Vol 227-28, pp 266-270, issn 0022-0248Conference Paper
Excitonic wave packets observed in space- and time-resolved pump and probe experimentsOTREMBA, R; GROSSE, S; KOCH, M et al.Solid state communications. 1999, Vol 109, Num 5, pp 317-322, issn 0038-1098Article
Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer A1P for electron localizationSUGITA, T; USAMI, N; SHIRAKI, Y et al.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 323-327, issn 0022-0248Conference Paper
Influence of ionic character on GaAs1-xPx:N photoluminescence spectraMEFTAH, A; OUESLATI, M.Solid state communications. 1997, Vol 101, Num 1, pp 27-31, issn 0038-1098Article
Photoemission of spinpolarized electrons from strained GaAsPDRESCHER, P; ANDRESEN, H. G; HARTMANN, P et al.Applied physics. A, Materials science & processing (Print). 1996, Vol 63, Num 2, pp 203-206, issn 0947-8396Article
Tensile-strained GaAsP/GaInAsP/GaInP quantum well lasersZHANG, G; NÄPPI, J; PESSA, M et al.IEEE photonics technology letters. 1994, Vol 6, Num 1, pp 1-3, issn 1041-1135Article
Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlatticesLUTGEN, S; MARSCHNER, T; ALBRECHT, T. F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 249-252, issn 0921-5107Conference Paper
A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristicsCHANGLING YAN; YONGQIANG NING; GUOQIANG CHU et al.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 685-689, issn 0268-1242, 5 p.Article
New electron and hole traps in GaAsP alloyTEO, K. L; LI, M. F; GOO, C. H et al.International journal of electronics. 1997, Vol 83, Num 1, pp 29-35, issn 0020-7217Article
Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxyWHITTINGHAM, K. L; EMERSON, D. T; SHEALY, J. R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1611-1615, issn 0361-5235Conference Paper
1070 nm and 1118 nm high power lasers grown with partial strain balancingROBERTS, J. S; CULLIS, A. G; SARMA, J et al.Journal of crystal growth. 2003, Vol 248, pp 348-353, issn 0022-0248, 6 p.Conference Paper
The picosecond time scale spin-polarized electron kinetics in thin semiconductor layersAULENBACHER, K; SCHULER, J; HARRACH, D. V et al.SPIE proceedings series. 2003, pp 424-427, isbn 0-8194-4824-9, 4 p.Conference Paper
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodesOHKI, Susumu; FUNATO, Hiroki; SUHARA, Michihiko et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 288-293, issn 0169-4332Conference Paper
Thin layers of GaInP, GaP and gaasp in metalorganic vapour phase epitaxy-grown resonant tunnelling diodesWERNERSSON, L.-E; GUSTAFSON, B; GUSTAFSSON, A et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 252-257, issn 0169-4332Conference Paper
Investigation of strain induced patterning in superlattices by grazing incidence diffraction: comparison of morphological and strain orderingBAUMBACH, G. T; GIANNINI, C; LÜBBERT, D et al.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 10A, pp A212-A215, issn 0022-3727Article
The DX center in GaAsP alloysBEN SALEM, M. M; ZAIDI, M. A; ZAZOUI, M et al.Physica status solidi. B. Basic research. 1998, Vol 209, Num 2, pp 363-374, issn 0370-1972Article